1 power transistors 2sd1252, 2sd1252a silicon npn triple diffusion planar type f or p o w er amplification complementa r y to 2sb 0 929 ( 2sb929 ) and 2sb 0 929a ( 2sb929 a ) n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 80 60 80 6 5 3 35 1.3 150 C55 to +150 unit v v v a a w ?c ?c 2sd1252 2sd1252a 2sd1252 2sd1252a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = 60v, v be = 0 v ce = 80v, v be = 0 v ce = 30v, i b = 0 v ce = 60v, i b = 0 v eb = 6v, i c = 0 i c = 30ma, i b = 0 v ce = 4v, i c = 1a v ce = 4v, i c = 3a v ce = 4v, i c = 3a i c = 3a, i b = 0.375a v ce = 5v, i c = 0.5a, f = 10mhz i c = 1a, i b1 = 0.1a, i b2 = C 0.1a, v cc = 50v min 60 80 40 10 typ 30 0.5 2.5 0.4 max 200 200 300 300 1 250 1.8 1.2 unit m a m a ma v v v mhz m s m s m s 2sd1252 2sd1252a 2sd1252 2sd1252a 2sd1252 2sd1252a * h fe1 rank classification rank r q p h fe1 40 to 90 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter n type package 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 unit: mm 8.5 0.2 4.4 0.5 2.0 10.0 0.3 14.7 0.5 4.4 0.5 6.0 0.3 3.4 0.3 2.54 0.3 5.08 0.5 1.0 0.1 0.8 0.1 1.5 +0 ?.4 3.0 +0.4 ?.2 0 to 0.4 1.1 max. r0.5 r0.5 123 1:base 2:collector 3:emitter n type package (ds)
2 power transistors 2sd1252, 2sd1252a p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 50 50 2mm al heat sink (3) without heat sink (p c =1.3w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 024 20 16 412 8 0 1.2 1.0 0.8 0.6 0.4 0.2 i b =7ma 6ma 5ma 4ma 3ma 2ma 1ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.4 2.0 1.6 0.4 1.2 0.8 0 8 6 2 5 7 4 1 3 t c =100?c 25?c ?5?c v ce =4v base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 0.03 0.3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =4v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =5v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 i cp i c t=10ms 300ms 1ms 2sd1252 2sd1252a non repetitive pulse t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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